Growth of Sic Substrates
نویسنده
چکیده
In recent years SIC has metamorphisized from an R&D based materials system to emerge as a key substrate technology for a significant fraction of the world production of green, blue and ultraviolet LEDs. Emerging markets for S i c homoepitaxy include high-power switching devices and microwave devices. Applications for heteroepitaxial GaN-based structures on S i c substrates include laserss and microwave devices. In this paper we review the properties of Sic, assess the current status of substrate and epitaxial growth, and outline our expectations for S i c in the future.
منابع مشابه
Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC
The controlled growth of SiC heteropolytypic structures consisting of hexagonal and cubic polytypes has been performed by solid-source molecular-beam epitaxy. On on-axis substrates, 4H/3C/4H–SiC~0001! and 6H/3C/6H–SiC~0001! structures were obtained by first growing the 3C–SiC layer some nanometer thick at lower substrate temperatures (T51550 K) and Si-rich conditions and a subsequent growth of ...
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